期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
卷 37, 期 2, 页码 -出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.5074153
关键词
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资金
- ASM Microchemistry
- Finnish Centre of Excellence in Atomic Layer Deposition - Academy of Finland
Tungsten disulfide (WS2) is a semiconducting 2D material, which is gaining increasing attention in the wake of graphene and MoS2 owing to its exciting properties and promising performance in a multitude of applications. Herein, the authors deposited WSx thin films by atomic layer deposition using W-2(NMe2)(6) and H2S as precursors. The films deposited at 150 degrees C were amorphous and sulfur deficient. The amorphous films crystallized as WS2 by mild postdeposition annealing in H2S/N-2 atmosphere at 400 degrees C. Detailed structural characterization using Raman spectroscopy, x-ray diffraction, and transmission electron microscopy revealed that the annealed films consisted of small (<10 nm) disordered grains. The approach proposed by the authors enables deposition of continuous and smooth WS2 films down to a thickness of a few monolayers while retaining a low thermal budget compatible with potential applications in electronics as well as energy production and storage, for example. Published by the AVS.
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