期刊
JOURNAL OF HAZARDOUS MATERIALS
卷 366, 期 -, 页码 240-249出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jhazmat.2018.11.107
关键词
MoS(2)nanosheet; Structural defect; Hg-0 adsorption; ab initio calculation
资金
- National Key Research and Development Projects [2017YFB0603202]
- National Natural Science Foundation of China [51836006, 51706114]
- Ningbo Natural Science Foundation [2017A610060]
In this research, ab initio calculations and experimental approach were adopted to reveal the mechanism of Hg-0 adsorption on MoS2 nanosheets that contain various types of defects. The ab initio calculation showed that, among different structural defects, S vacancies (Vs) in the MoS2 nanosheets exhibited outstanding potential to strongly adsorb Hg-0. The MoS2 material was then prepared in a controlled manner under conditions, such as temperature, concentration of precursors, etc., that were determined by adopting the new method developed in this study. Characterisation confirmed that the MoS2 material is of graphene-like layered structure with abundant structural defects. The integrated dynamic and steady state (IDSS) testing demonstrated that the Vs-rich nanosheets showed excellent Hg-0 adsorption capability. In addition, ab initial calculation on charge density difference, PDOS, and adsorption pathways revealed that the adsorption of Hg-0 on the Vs-rich MoS2 surface is non-activated chemisorption.
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