期刊
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
卷 67, 期 1, 页码 318-331出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMTT.2018.2873374
关键词
Base stations; CMOS; fifth generation (5G); low-noise amplifier (LNA); millimeter wave; phase shifter; power amplifier (PA); silicon on insulator (SOI); transmit/receive front-end; 28-GHz phased-array; variable gain amplifier (VGA)
资金
- Qorvo
- Global Foundries
This paper presents a 28-GHz common-leg phasedarray front-end in 45-nm CMOS silicon on insulator with transmit and receive capabilities. The design alternates cascode amplifiers with passive switched-LC phase-shifter cells to result in 5-bit phase control with an rms phase and gain error <4 degrees and <0.8 dB, respectively, at 24-30 GHz, over 32 phase states. The front-end has 2- and 3-bit variable gain amplifiers with 7.5-dB total gain control, without affecting the system noise figure (NF). Two low-loss high-linearity single-pole double-throw switches are used to switch between transmit and receive modes. In the receive (Rx) mode, the measured gain, NF, input 1-dB compression point (P-1dB), and input third-order intercept point are 16 dB, 3.7 dB, -15 dBm, and -7 dBm, respectively, with 54-mW dc power consumption. In the transmit (Tx) mode, measurements show 16.5-dB gain, an output P1dB of 8 dBm, and an output IP3 of 16 dBm with 100-mW dc power consumption. The error-vector magnitude and adjacent-channel-power-ratio measurements demonstrate quadrature phase-shift keying, 16-quadrature amplitude modulation (QAM), 64-QAM, and 16-QAM orthogonal frequency-division multiplexing modulations with several symbol-rates reaching up to 8 Gb/s data-rate for both the Rx and Tx modes at 2-and 5-dB back-off. The application areas are in fifth-generation phased arrays requiring high-linearity receivers and using external front-end modules for added transmit power.
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