期刊
IEEE ELECTRON DEVICE LETTERS
卷 40, 期 1, 页码 40-43出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2883732
关键词
Anion composition; ZnON; subgap density of states; thin-film transistors
资金
- National Research Foundation of Korea - South Korean Government (MSIP) [2016R1A5A1012966]
- Ministry of Education, Science and Technology [2017R1A2B4006982]
- IC Design Education Center
The influence of anion composition on the electrical characteristics of amorphous zinc-oxynitride thin-film transitors (TFTs) is investigated and quantitatively modeled, with emphasis on the subgap density of states (DOS). As the ratio of N to (N + O) increases, the density of valence band tail states increases, followed by narrowing of the bandgap and a decrease in the density of conduction band tail states, which in turn is followed by either a higher field-effect mobility or a better subthreshold swing; each of these effects is explained. Furthermore, the anion composition dependence of the transconductance degradation at a high bias is analyzed on the basis of the proposed model. In addition, the effects of the N/(N + O) ratio on carrier density and field-effect mobility are quantitatively explained by the ionized nitrogen vacancy (V-N(1.3+)) model observed in shallow donor peak in the DOS and by the charge-controlled mobility model, respectively. Finally, the effect of nanocrystalline structure mixed with amorphous on transport properties is discussed.
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