期刊
CHEMICAL ENGINEERING JOURNAL
卷 358, 期 -, 页码 752-758出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.cej.2018.10.088
关键词
kappa-In2Se3; MoS2 nanopetals; Heterostructure; Photoanode; P-N junction
资金
- National Natural Science Foundation of China [51774341, 51674298, 51720105014]
- Fundamental Research Funds for the Central Universities of Central South University [2016zzts277]
kappa-In2Se3, a rarely reported phase of indium selenide, is synthesized here using a hot-injection method. The hexagonal nanoplates show photoresponses at positive bias, thus is considered as a potential material for photoanode utilization. In order to further improve the photoelectrocatalytic performance of kappa-In2Se3, MoS2 nanopetals are introduced by a solution-based ultrasonic method. The In2Se3/MoS2 heterojunction exhibits a significantly higher photocurrent density and higher PEC O-2 evolution amount than those of pristine In2Se3. PL test shows that the charge separation is promoted, due to numerous p-n junctions formed at the interfaces of In2Se3/MoS2. This led to more efficient utilization of photogenerated electron-hole pairs. Moreover, the charge transfer resistance is greatly reduced by the cooperative interaction of the two materials.
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