期刊
CERAMICS INTERNATIONAL
卷 45, 期 3, 页码 3921-3929出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2018.11.065
关键词
Co-sintering; Lattice defects; Silicon carbide; Ceramic membrane
资金
- National Key Research and Development Program of China [2017YFB0310400]
- National Natural Science Foundation of China [51872082, 51302076, 51372078]
A SiC ceramic membrane was successfully fabricated at 2200 degrees C by a co-sintering process through the addition of B4C powder. The support and membrane with a pore size of 34.92 mu m and 9.93 mu m were prepared with coarse SiC powder (similar to 120 mu m) and spheroidized SiC powder (similar to 22 mu m), respectively. The interface between the support and membrane was distinct and particles were closely bonded to each other. The addition of 1.5 wt% B4C can decrease the sintering temperature of support from 2350 to 2200 degrees C, which had a good match with that of membrane. The mechanism for promoting the sintering of support is that B4C dissolved into the SiC lattice and increased the crystal defects. The bending strength of the support and the membrane was 38.77 MPa and 32.15 MPa, respectively. The nitrogen gas flux and gas permeability of the SiC ceramic membrane was 19,406 m(3)/m(2) h bar and 5.817 x 10(-12) m(2).
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