Two-dimensional SnS2 nanosheets arrays as photoelectrode by low temperature CVD method for efficient photoelectrochemical water splitting

Two-dimensional (2D) metal dichalcogenides have attracted considerable attention in photoelectrochemical (PEC) water splitting because of their particular layer structure and strong interaction with light. Herein, in this article, we report a facile chemical vapor deposition (CVD) method, via low boiling point SnCl4.5H(2)O and S powders as precursors. Light trapping nanosheets arrays SnS2 (SnS2 perpendicular to FTO) have been deposited on conductive substrate. By optimizing the preparation conditions, included deposition temperature, flow rate of carrier gas and the distance between the Sn source and growth substrate. Moreover, the key factors to affect the growth of SnS2 in CVD process have been investigated in detail. In PEC measurements, the as-synthesized thin film of 450 degrees C, 50 sccm, 11 cm shows the highest photocurrent density of up to 3.68 mA cm(-2) at 0.5 V vs. SCE under the sunlight and high IPCE of up to 33.11% at 365 nm. The values much higher than conventional photoelectrode by spin-coating (SnS2 //FTO), which achieved efficient photoelectrochemical water splitting under the sunlight.