期刊
ADVANCED FUNCTIONAL MATERIALS
卷 29, 期 24, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201900040
关键词
electronic applications; metal chalcogenides; optoelectronic applications; structures; 2D materials
类别
资金
- National Natural Science Foundation of China [61622406, 11674310, 61774144, 51673114, 61571415, 51502283]
- National Key Research and Development Program of China [2017YFA0207500, 2016YFB0700700]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB30000000]
- Shanghai Science and Technology Committee [17ZR1447300]
- Hundred Talents Program of Chinese Academy of Sciences
Emerging 2D metal chalcogenides present excellent performance for electronic and optoelectronic applications. In contrast to graphene and other 2D materials, 2D metal chalcogenides possess intrinsic bandgaps, versatile band structures, and superior atmospheric stability. The many categories of 2D metal chalcogenides ensure that they can be applied to various practical scenarios. 2D metal monochalcogenides, dichalcogenides, and trichalcogenides are the three main categories of these materials. They have distinct crystal structures resulting in different characteristics. Some basic device characteristics, such as the charge carrier characteristics, scattering mechanisms, interfacial contacts, and band alignments of heterojunctions, are vital factors for practical device applications that ensure that the desired properties can be achieved. Various electronic, optoelectronic, and photonic applications based on 2D metal chalcogenides have been extensively investigated. 2D metal chalcogenides are considered as competitive candidates for future electronic and optoelectronic applications.
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