期刊
ADVANCED FUNCTIONAL MATERIALS
卷 29, 期 19, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201809119
关键词
2D electronics; InSe transistors; tactile sensors; triboelectric nanogenerators; tribotronics
类别
资金
- National Key Research and Development Program of China [2016YFB0501604]
- Natural Science Foundation of China [61774061, 61504043]
- NSAF Foundation of China [U1830130]
- Taiwan Ministry of Science and Technology
- MOST [107-2119-M-005-006, MOST 106-2112-M-005-010, MOST 107-2218-E-005-021]
Electronics based on layered indium selenide (InSe) channels exhibit promising carrier mobility and switching characteristics. Here, an InSe tribotronic transistor (denoted as w/In InSe T-FET) obtained through the vertical combination of an In-doped InSe transistor and triboelectric nanogenerator is demonstrated. The w/In InSe T-FET can be operated by adjusting the distance between two triboelectrification layers, which generates a negative electrostatic potential that serves as a gate voltage to tune the charge carrier transport behavior of the InSe channel. Benefiting from the surface charging doping of the In layer, the w/In InSe T-FET exhibits high reliability and sensitivity with a large on/off current modulation of 10(6) under a low drain-source voltage of 0.1 V and external frictional force. To demonstrate its function as a power-saving tactile sensor, the w/In InSe T-FET is used to sense INSE in Morse code and power on a light-emitting diode. This work reveals the promise of 2D material-based tribotronics for use in nanosensors with low power consumption as well as in intelligent systems.
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