期刊
ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 13, 页码 12613-12621出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b20714
关键词
doping; substitutional; wafer scale; MoS2; electronics; optoelectronics; monolayer
资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) [2016K1A1A2912707, 2016R1A2B4012931, 2018R1A6A3A11047867]
- Global Frontier Research Center for Advanced Soft Electronics through the National Research Foundation of Korea (NRF) [2011-0031630]
- Institute for Information & Communications Technology Promotion (IITP) - Ministry of Science, ICT & Future Planning of Korea [B0117-16-1003]
- Institute for Information & Communication Technology Planning & Evaluation (IITP), Republic of Korea [B0117-16-1003] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2018R1A6A3A11047867] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The substitutional doping method is ideally suited to generating doped two-dimensional (2D) materials for practical device applications as it does not damage or destabilize such materials. However, recently reported substitutional doping techniques for 2D materials have given rise to discontinuities and low uniformities, which hamper the extension of such techniques to large-scale production. In the current work, we demonstrated uniform substitutional doping of monolayer MoS2 in a 2 in. wafer of area >13 cm(2). The devices based on doped MoS2 showed extremely high uniformity and stability in electrical properties in ambient conditions for 30 days. The photodetectors based on the doped MoS2 samples showed an ultrahigh photoresponsivity of 5 x 10(5) A/W, a detectivity of 5 x 10(12) Jones, and a fast response rate of 5 ms than did those based on undoped MoS2. This work showed the feasibility of real-life applications based on functionalized 2D semiconductors for next-generation electronic and optoelectronic devices.
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