Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover@SiO2Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes
出版年份 2016 全文链接
标题
Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover@SiO2Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes
作者
关键词
-
出版物
ADVANCED MATERIALS
Volume 28, Issue 33, Pages 7228-7233
出版商
Wiley
发表日期
2016-05-17
DOI
10.1002/adma.201600890
参考文献
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