Isoelectronic Tungsten Doping in Monolayer MoSe2for Carrier Type Modulation

标题
Isoelectronic Tungsten Doping in Monolayer MoSe2for Carrier Type Modulation
作者
关键词
-
出版物
ADVANCED MATERIALS
Volume 28, Issue 37, Pages 8240-8247
出版商
Wiley
发表日期
2016-07-07
DOI
10.1002/adma.201601991

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