4.8 Article

Electrolyte-Gated Organic Field-Effect Transistor Based on a Solution Sheared Organic Semiconductor Blend

期刊

ADVANCED MATERIALS
卷 28, 期 46, 页码 10311-10316

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201602479

关键词

-

资金

  1. ERC [StG2012-306826]
  2. Networking Research Center on Bioengineering, Biomaterials and Nanomedicine (CIBER-BBN)
  3. DGI (Spain) [CTQ2013-40480-R]
  4. Generalitat de Catalunya [2014-SGR-17]
  5. Spanish Ministry of Economy and Competitiveness, through the Severo Ochoa Programme for Centres of Excellence in RD [SEV-2015-0496]
  6. People Programme (Marie Curie Actions) of the Seventh Framework Programme of the European Union under Research Executive Agency [600388]
  7. Agency for Business Competitiveness of the Government of Catalonia, ACCIO
  8. Fundamental Research Funds for the Central Universities [XDJK2014C081]

向作者/读者索取更多资源

This communication presents a novel electrolyte gated field-effect transistor based on a blend of dibenzo-tetrathiafulvalene and polystyrene deposited through bar-assisted meniscus shearing. This technique allows the fabrication of high performing electronic devices suitable for (bio)sensing applications and might capture industrial interest due to its scalability. The reported devices can operate in aqueous solution with comparable complexity to real samples.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据