期刊
ELECTRONICS
卷 7, 期 12, 页码 -出版社
MDPI
DOI: 10.3390/electronics7120377
关键词
AlGaN; GaN; high-electron mobility transistor (HEMTs); p-GaN; enhancement-mode
资金
- Research of Low Cost Fabrication of GaN Power Devices and System Integration [JCYJ20160226192639004]
- Research of AlGaN HEMT MEMS Sensor for Work in Extreme Environment [JCYJ20170412153356899]
- Research of the Reliability Mechanism and Circuit Simulation of GaN HEMT [2017A050506002]
GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据