2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification

Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure

(2018) Muhammad Atif Khan et al.   ACS Applied Materials & Interfaces

Engineering few-layer MoTe2 devices by Co/hBN tunnel contacts

(2018) Mengjian Zhu et al.   APPLIED PHYSICS LETTERS

Atomically thin p–n junctions based on two-dimensional materials

(2018) Riccardo Frisenda et al.   CHEMICAL SOCIETY REVIEWS

High Performance Amplifier Element Realization via MoS2 /GaTe Heterostructures

(2018) Xiao Yan et al.   Advanced Science

Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenide van der Waals heterostructures

(2017) Yipeng Zhao et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Multifunctional high-performance van der Waals heterostructures

(2017) Mingqiang Huang et al.   Nature Nanotechnology

Bifacial CdS/CdTe thin-film solar cells using a transparent silver nanowire/indium tin oxide back contact

(2017) Yongbeom Kwon et al.   OPTICS EXPRESS

Interlayer resistance of misoriented MoS2

(2017) Kuan Zhou et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Band Alignment of 2D Transition Metal Dichalcogenide Heterojunctions

(2016) Ming-Hui Chiu et al.   ADVANCED FUNCTIONAL MATERIALS

Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application

(2016) Amirhasan Nourbakhsh et al.   NANO LETTERS

Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts

(2016) Mahito Yamamoto et al.   NANO LETTERS

2D materials and van der Waals heterostructures

(2016) K. S. Novoselov et al.   SCIENCE

Ultrafast charge transfer in MoS2/WSe2p–n Heterojunction

(2016) Bo Peng et al.   2D Materials

Van der Waals heterostructures and devices

(2016) Yuan Liu et al.   Nature Reviews Materials

Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors

(2015) Tania Roy et al.   ACS Nano

Charge Transfer Excitons at van der Waals Interfaces

(2015) Xiaoyang Zhu et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Vertical Heterostructure of Two-Dimensional MoS2 and WSe2 with Vertically Aligned Layers

(2015) Jung Ho Yu et al.   NANO LETTERS

High-Current Gain Two-Dimensional MoS2-Base Hot-Electron Transistors

(2015) Carlos M. Torres et al.   NANO LETTERS

Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

(2015) M.-Y. Li et al.   SCIENCE

Enhanced device performances of WSe2–MoS2 van der Waals junction p–n diode by fluoropolymer encapsulation

(2015) Pyo Jin Jeon et al.   Journal of Materials Chemistry C

Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode

(2014) Yexin Deng et al.   ACS Nano

Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p–n Diodes

(2014) Rui Cheng et al.   NANO LETTERS

Atomically thin p–n junctions with van der Waals heterointerfaces

(2014) Chul-Ho Lee et al.   Nature Nanotechnology

Carrier Control of MoS2 Nanoflakes by Functional Self-Assembled Monolayers

(2013) Yang Li et al.   ACS Nano

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides

(2013) Hualing Zeng et al.   Scientific Reports

From Bulk to Monolayer MoS2: Evolution of Raman Scattering

(2012) Hong Li et al.   ADVANCED FUNCTIONAL MATERIALS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

Symmetry-dependent phonon renormalization in monolayer MoS2transistor

(2012) Biswanath Chakraborty et al.   PHYSICAL REVIEW B

NpN-GaN/InxGa1−xN/GaN heterojunction bipolar transistor on free-standing GaN substrate

(2011) Zachary Lochner et al.   APPLIED PHYSICS LETTERS

High-Current-Gain Direct-Growth GaN/InGaN Double Heterojunction Bipolar Transistors

(2010) Yi-Che Lee et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

2D materials: to graphene and beyond

(2010) Rubén Mas-Ballesté et al.   Nanoscale

DC characteristics of AZO/GaN heterojunction bipolar transistors

(2009) C.-T. Pan et al.   ELECTRONICS LETTERS