4.6 Article

Davydov splitting and polytypism in few-layer MoS2

期刊

2D MATERIALS
卷 6, 期 1, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/aae61c

关键词

transition metal dichalcogenides; TMD; MoS2; Raman spectroscopy; polytype; Davydov splitting; interlayer interaction

资金

  1. National Research Foundation (NRF) - Korean government (MSIT) (SRC program: vdWMRC center) [2016R1A2B3008363, 2017R1A5A1014862]
  2. Center for Advanced Soft Electronics under the Global Frontier Research Program of MSIT [2013M3A6A5073173]
  3. National Research Foundation of Korea [2016R1A2B3008363] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

The dependence of the interlayer interaction on the stacking order of MoS2 is investigated by Raman spectroscopy using three excitation energies of 2.81, 2.41, and 1.96 eV. The low-frequency Raman spectra show distinct correlation with the stacking type. The A-like intra-layer vibration mode at 405 cm(-1) exhibit Davydov splitting due to interlayer interactions when the 1.96 eV excitation is used. The positions and the relative intensities of the Davydov-split peaks depend on the stacking type as well. By using the linear-chain model, the interlayer force constants are extracted and compared for 3-layer samples with different stacking types: the 3R-types have a larger force constant than the 2H-type. For the 2H-type, Davydov splitting is analyzed as a function of the number of layers. The force constants for the second-nearest-neighbor interaction are obtained and compared with other transition metal dichalcogenides.

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