期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 9, 期 1, 页码 308-312出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2018.2874039
关键词
Cu(ln,Ca)Se-2 (CIGS); electrical potential/field; Kelvin probe force microscopy (KPFM); pn junction location; thin-film solar cell; window layer
资金
- U.S. Department of Energy (DOE) [DE-AC36-08GO28308]
- U.S. Department of Energy's Office of Energy Efficiency and Renewable Energy under Solar Energy Technologies Office [30296]
We report on measurements of junction location in Cu(In,Ga)Se-2 (CIGS) solar cells with different window-layer materials by nm-resolution electrical potential/field profiling across the junction using Kelvin probe force microscopy imaging on cross-section of the devices. The results illustrate that the device with a CdS window layer (CdS/CIGS) has a buried homojunction located inside the CIGS absorber with similar to 40-nm junction depth, whereas the ZnOS/CIGS devices with and without partial electrolyte treatment prior to the window-layer deposition are similar, exhibiting a heterointerface junction. This junction location may contribute in part to the highest efficiency of the CdS/CIGS device among the three devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据