A Tunneling Dielectric Layer Free Floating Gate Nonvolatile Memory Employing Type-I Core-Shell Quantum Dots as Discrete Charge-Trapping/Tunneling Centers
出版年份 2018 全文链接
标题
A Tunneling Dielectric Layer Free Floating Gate Nonvolatile Memory Employing Type-I Core-Shell Quantum Dots as Discrete Charge-Trapping/Tunneling Centers
作者
关键词
-
出版物
Small
Volume 15, Issue 1, Pages 1804156
出版商
Wiley
发表日期
2018-11-27
DOI
10.1002/smll.201804156
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