期刊
ACTA MATERIALIA
卷 119, 期 -, 页码 136-144出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2016.08.026
关键词
Thermoelectric; Zinc oxide; Microstructure; Grain boundary; Electrical conductivity
资金
- National Basic Research Program of China [2013CB632900, 2012CB619406]
- National Natural Science Foundation of China [61137004, 61275181, 51202272]
- NSAF of China [U1330120]
- International & Technology Cooperation Program of China [2013DFG51570]
- Shanghai Municipal Science and Technology Commission [15DZ2260300]
- Innovation Project of the Shanghai Institute of Ceramics
ZnO is a promising thermoelectric material for high-temperature applications; however, the strong correlation between the electrical and thermal transport properties has limited their simultaneous optimization to achieve superior thermoelectric performance. In this work, defect engineering was applied to solve this problem. The results revealed that by eliminating the intrinsic acceptor defects at the grain boundaries, the Schottky barrier disappeared, which led to a huge increase in the Hall mobility. Meanwhile, an increased solid solution of the trivalent dopant Al was achieved to increase the carrier concentration. The increased Hall mobility and carrier concentration gave rise to a maximum electrical conductivity (sigma(310K)) of 1.9 x 10(5) S m(-1), showing a metallic-like behavior. Owing to the ultrahigh sigma with moderate Seebeck coefficient, a maximum power factor of 8.2 x 10(-4) W m(-1) K-2 was obtained at 980 K. Moreover, by introducing large numbers of lattice defects in the grains, the lattice thermal conductivity was simultaneously decreased. Therefore, the multiple-doped ZnO ceramic with defect engineering of both grains and grain boundaries optimized the electrical and thermal transport properties in a relatively independent way which provided a new and effective route to optimize the performance of the ZnO-based thermoelectric materials. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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