4.7 Article

Effect of substrate orientation on the formation of equiaxed stray grains in laser surface remelted single crystal superalloys: Experimental investigation

期刊

ACTA MATERIALIA
卷 104, 期 -, 页码 250-258

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2015.11.018

关键词

Substrate orientation; Stray grain susceptibility; Single crystal superalloy; Laser repair

资金

  1. National Natural Science Foundation of China [51271149]
  2. Aviation Science Foundation [2013ZF53080]
  3. Fund of the Innovation Base of Graduate Students of NPU

向作者/读者索取更多资源

Substrate orientation could play a key role in the stray grain (SG) formation in laser welded single crystal (SX) alloys, which is critical to a successful repair of SX components. In a previous work [Acta mater 2015; 88:283-292], we studied theoretically the substrate orientation effect on equiaxed SG susceptibility in laser melt pools by altering the orientation via rotations around x-, y-, and z-axis, which coincide with the [100], [010], and [001] crystallographic directions, respectively. It was found that y-axis rotation leads to a strong variation in SG ability whereas x- and z-axis rotations nearly have no effect. In this study, experiments were conducted to verify the calculated results. DD6, a second-generation Chinese SX superalloy was chosen as the object of research. The orientation-dependent SG formation was determined and the area-average volume fraction of SGs was employed to evaluate the overall CET tendency. The experimental tendency of the orientation dependent SG agrees well with the theoretical prediction. The effect of the substrate orientation on SG formation was further revealed by cost psi distribution, where psi is a geometrical parameter which is the angle between normal vector to the solidification front and preferred crystallographic direction in dendrite domain. Our results provide an in-depth insight into the control of laser processing window for SX repair via adjusting the substrate orientation. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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