期刊
NANO LETTERS
卷 19, 期 2, 页码 1172-1178出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b04612
关键词
Nanoscale gaps; nanoelectronics; ultrafast photoemission; laser ablation; photodetector
类别
资金
- Deutsche Forschungsgemeinschaft (DFG) through the priority program 1666
- Nanoinitiative Munich (NIM)
- cluster eConversion
- TUM International Graduate School of Science and Engineering (IGSSE) [GSC 81]
- International Max Planck Research School for Quantum Science and Technology (IMPRS-QST)
We demonstrate that prestructured metal nanogaps can be shaped on-chip to below 10 nm by femtosecond laser ablation. We explore the plasmonic properties and the nonlinear photocurrent characteristics of the formed tunnel junctions. The photocurrent can be tuned from multiphoton absorption toward the laser-induced strong-field tunneling regime in the nanogaps. We demonstrate that a unipolar ballistic electron current is achieved by designing the plasmonic junctions to be asymmetric, which allows ultrafast electronics on the nanometer scale.
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