Multilevel Resistance Switching Memory in La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) Heterostructure by Combined Straintronics-Spintronics

标题
Multilevel Resistance Switching Memory in La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) Heterostructure by Combined Straintronics-Spintronics
作者
关键词
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出版物
ACS Applied Materials & Interfaces
Volume 8, Issue 8, Pages 5424-5431
出版商
American Chemical Society (ACS)
发表日期
2016-02-05
DOI
10.1021/acsami.5b11392

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