期刊
ACS APPLIED MATERIALS & INTERFACES
卷 8, 期 31, 页码 20185-20191出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b05071
关键词
phase change material; oxygen doping vibration modes; octahedral structure; switching energy
资金
- SUTD-MIT International Design Centre (IDC), Designer Chalcogenides Project [IDCSF1200108OH]
- A-star Singapore-China joint research program [1420200046]
- National Key Basic Research Program of China [2011CBA00607, 2011CBA00602]
- National Nature Science Foundation of China [61076121]
The effect of oxygen on the local structure of Ge atoms in GeTe-O materials has been investigated. Oxygen leads to a significant modification to the vibrational modes of Ge octahedra, which results from a decrease in its coordination. We find that a defective octahedral Ge network is the crucial fingerprint for rapid and reversible structural transitions in GeTe-based phase change materials. The appearance of oxide Raman modes confirms phase separation into GeO and TeO at high level O doping. Counterintuitively, despite the increase in crystallization temperature of oxygen doped GeTe-O phase change materials, when GeTe-O materials are used in electrical phase change memory cells, the electrical switching energy is lower than the pure GeTe material. This switching energy reduction is ascribed to the smaller change in volume, and therefore smaller enthalpy change, for the oxygen doped GeTe materials.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据