期刊
ACS Applied Materials & Interfaces
卷 8, 期 46, 页码 31485-31490出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b08955
关键词
Au/MgO/ZnO heterostructure; MIS junction; hole-injection layer; p-type Cu2O; ultraviolet random lasing
资金
- NSFC for Excellent Young Scholars [51422201]
- Program of NSFC [51372035, 51602028, 61505026, 61604037]
- 111 Project [B13013]
- Research Fund for the Doctoral Program of Higher Education [20130043110004]
- Fund from Jilin Province [20160520009JH, 20160520115JH, 20160520114JH]
- Open Project from State Key Laboratory of Applied Optics [202115002]
- China Postdoctoral Science Foundation [2015M580238, 2016T90237]
Ultraviolet light-emitting devices (LEDs) were fabricated on the basis of Au/MgO/ZnO metal/insulator/semiconductor (MIS) heterostructures. By introducing a thermally oxidized p-type Cu2O hole injection layer into this MIS structure, enhanced ultraviolet electroluminescence (EL) and random lasing with reduced threshold injection current are achieved. The enhancement mechanism is attributed to effective hole transfer from p-Cu2O to i-MgO under forward bias, which increases the initial carrier concentration of MgO dielectric layer and further promotes impact-ionization effect induced carrier generation and injection. The current study proposes a new and effective route to improve the EL performance of MIS junction LEDs via introducing extrinsic hole suppliers.
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