A phase-change memory model for neuromorphic computing

Equivalent-accuracy accelerated neural-network training using analogue memory

(2018) Stefano Ambrogio et al.   NATURE

Neuromorphic computing with multi-memristive synapses

(2018) Irem Boybat et al.   Nature Communications

Signal and noise extraction from analog memory elements for neuromorphic computing

(2018) N. Gong et al.   Nature Communications

Collective Structural Relaxation in Phase-Change Memory Devices

(2018) Manuel Le Gallo et al.   Advanced Electronic Materials

Modeling of the Temperature Profiles and Thermoelectric Effects in Phase Change Memory Cells

(2018) Changcheng Ma et al.   Applied Sciences-Basel

Microscopic Origin of Electron Transport Properties and Ultrascalability of Amorphous Phase Change Material Germanium Telluride

(2017) Jie Liu   IEEE TRANSACTIONS ON ELECTRON DEVICES

Efficient Processing of Deep Neural Networks: A Tutorial and Survey

(2017) Vivienne Sze et al.   PROCEEDINGS OF THE IEEE

Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

(2017) Feng Rao et al.   SCIENCE

Stochastic phase-change neurons

(2016) Tomas Tuma et al.   Nature Nanotechnology

Acceleration of Deep Neural Network Training with Resistive Cross-Point Devices: Design Considerations

(2016) Tayfun Gokmen et al.   Frontiers in Neuroscience

Recent Progress in Phase-Change_newline Memory Technology

(2016) Geoffrey W. Burr et al.   IEEE Journal on Emerging and Selected Topics in Circuits and Systems

Multilevel-Cell Phase-Change Memory: A Viable Technology

(2016) Aravinthan Athmanathan et al.   IEEE Journal on Emerging and Selected Topics in Circuits and Systems

Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element

(2015) Geoffrey W. Burr et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A multi-scale analysis of the crystallization of amorphous germanium telluride using ab initio simulations and classical crystallization theory

(2014) Jie Liu et al.   JOURNAL OF APPLIED PHYSICS

Phase change materials and phase change memory

(2014) Simone Raoux et al.   MRS BULLETIN

Crystal growth within a phase change memory cell

(2014) Abu Sebastian et al.   Nature Communications

Nanoscale electronic synapses using phase change devices

(2013) Bryan L. Jackson et al.   ACM Journal on Emerging Technologies in Computing Systems

Physical aspects of low power synapses based on phase change memory devices

(2012) Manan Suri et al.   JOURNAL OF APPLIED PHYSICS

Physical origin of the resistance drift exponent in amorphous phase change materials

(2011) Mattia Boniardi et al.   APPLIED PHYSICS LETTERS

A High-Speed, Energy-Efficient Two-Cycle Multiply-Accumulate (MAC) Architecture and Its Application to a Double-Throughput MAC Unit

(2010) Tung Thanh Hoang et al.   IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study

(2009) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Possible mechanisms for1/fnoise in chalcogenide glasses: A theoretical description

(2009) M. Nardone et al.   PHYSICAL REVIEW B