Understanding the transport and contact properties of metal/BN-MoS2 interfaces to realize high performance MoS2 FETs

出版年份 2018 全文链接

标题

作者

关键词

Defect, BN buffer layer, Transport properties, Schottky barrier, Monolayer MoS, 2

出版物

Volume 771, Issue -, Pages 1052-1061

出版商

Elsevier BV

发表日期

2018-09-05

DOI

10.1016/j.jallcom.2018.09.026

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