Semipolar InGaN blue laser diodes with a low optical loss and a high material gain obtained by suppression of carrier accumulation in the p-waveguide region

标题
Semipolar InGaN blue laser diodes with a low optical loss and a high material gain obtained by suppression of carrier accumulation in the p-waveguide region
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 58, Issue 2, Pages 020902
出版商
Japan Society of Applied Physics
发表日期
2019-01-09
DOI
10.7567/1347-4065/aaf4b4

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