Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth

标题
Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 12, Pages 5329-5336
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2018-10-27
DOI
10.1109/ted.2018.2875534

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