4.6 Article

Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction

期刊

ELECTROCHEMISTRY COMMUNICATIONS
卷 98, 期 -, 页码 73-77

出版社

ELSEVIER SCIENCE INC
DOI: 10.1016/j.elecom.2018.11.021

关键词

Atomic layer deposition; Cobalt phosphate; Electrocatalysis; Oxygen evolution reaction

资金

  1. TU/e-DIFFER impulse program
  2. CO2-neutral-fuels (NWO) program
  3. CO2-neutral-fuels (Shell global solutions) program

向作者/读者索取更多资源

Electrodeposited cobalt phosphate has been reported as a valid alternative to noble metals as an electrocatalyst for the Oxygen Evolution Reaction (OER). In parallel, Atomic Layer Deposition (ALD) is increasingly being used in (photo)electrocatalytic applications. In this contribution we report on the electrocatalytic activity towards OER of ALD-prepared cobalt phosphate thin films. The selected ALD approach enables tuning of the Co-to-P atomic ratio, which is found to significantly affect the activity of the prepared electrocatalyst. Specifically, concurrently with a Co-to-P ratio increase from 1.6 to 1.9, the current density for OER increases from 1.77 mA/cm(2) at 1.8 V vs. RHE (Reversible Hydrogen Electrode) to 2.89 mA/cm(2) at 1.8 V vs. RHE. Moreover the sample with a Co-to-P ratio of 1.9 has superior performance when compared to electrodeposited cobalt phosphate thin films reported in the literature.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

Article Physics, Fluids & Plasmas

Charged particle kinetics and gas heating in CO2 microwave plasma contraction: comparisons of simulations and experiments

L. Vialetto, A. W. van de Steeg, P. Viegas, S. Longo, G. J. van Rooij, M. C. M. van de Sanden, J. van Dijk, P. Diomede

Summary: This work investigates the kinetics and transport of CO2 microwave plasmas through simulation results and experiments. The simulation results are validated against experimental measurements and the study reveals the effects of gas heating and charged species variation at different pressures.

PLASMA SOURCES SCIENCE & TECHNOLOGY (2022)

Article Multidisciplinary Sciences

Observation and rationalization of nitrogen oxidation enabled only by coupled plasma and catalyst

Hanyu Ma, Rakesh K. Sharma, Stefan Welzel, Mauritius C. M. van de Sanden, Mihalis N. Tsampas, William F. Schneider

Summary: This study investigates the synergy between heterogeneous catalysts and non-thermal plasma. Through experimental evidence and reactor model construction, it is revealed that neither catalyst nor plasma alone is productive, but their combination can generate nitrogen oxides. The study provides clear evidence for the synergy between heterogeneous catalysts and non-thermal plasma, and highlights the importance of their combined use.

NATURE COMMUNICATIONS (2022)

Article Energy & Fuels

Passivation Enhancement of Poly-Si Carrier-Selective Contacts by Applying ALD Al_2O_3 Capping Layers

Guangtao Yang, Bas van de Loo, Maciej Stodolny, Gianluca Limodio, Jimmy Melskens, Bart Macco, Paula Bronsveld, Olindo Isabella, Arthur Weeber, Miro Zeman, W. M. M. Kessels

Summary: This study investigates the application of Al_2O_3 prepared by atomic layer deposition as a hydrogenating capping layer for polycrystalline silicon passivating contacts. Results show that Al_2O_3/SiN_x stack greatly enhances passivation quality for various types of poly-Si layers, providing guidelines for significantly improving their passivation performance.

IEEE JOURNAL OF PHOTOVOLTAICS (2022)

Article Materials Science, Multidisciplinary

Controlling transition metal atomic ordering in two-dimensional Mo1-x W x S2 alloys

Jeff J. P. M. Schulpen, Marcel A. Verheijen, Wilhelmus M. M. (Erwin) Kessels, Vincent Vandalon, Ageeth A. Bol

Summary: Atomic ordering is an important parameter that can be experimentally tuned to finely tune the fundamental properties of 2D TMD alloys for specific applications.

2D MATERIALS (2022)

Article Nanoscience & Nanotechnology

Thickness and Morphology Dependent Electrical Properties of ALD-Synthesized MoS2 FETs

Reyhaneh Mahlouji, Marcel A. Verheijen, Yue Zhang, Jan P. Hofmann, Wilhelmus M. M. (Erwin) Kessels, Ageeth A. Bol

Summary: In this study, MoS2 films were synthesized using atomic layer deposition (ALD), and it was found that approximately 1.2 nm of MoS2 is sufficient for achieving optimal device electrical performance. The polycrystalline MoS2 network with empty spaces can serve as locations for side contact formation, leading to significant improvements in device metrics.

ADVANCED ELECTRONIC MATERIALS (2022)

Article Energy & Fuels

Effect of the ZnSnO/AZO Interface on the Charge Extraction in Cd-Free Kesterite Solar Cells

Carla Gobbo, Valerio Di Palma, Vanira Trifiletti, Claudia Malerba, Matteo Valentini, Ilaria Matacena, Santolo Daliento, Simona Binetti, Maurizio Acciarri, Giorgio Tseberlidis

Summary: This paper investigates the use of Cu2ZnSnS4 (CZTS) as an absorber material and CdS as a buffer layer in thin film solar cells. However, CdS has toxicity and poor band alignment with CZTS. As an alternative, ZnSnO (ZTO) is used as a buffer layer due to its abundance and non-toxic nature. Atomic layer deposition (ALD) is employed to deposit ZTO with different compositions and thicknesses. The results show that ALD can produce compact and homogeneous ZTO layers without the need for the i-ZnO layer, leading to a simpler and more eco-friendly solar cell structure with comparable efficiencies to the traditional one.

ENERGIES (2023)

Article Physics, Applied

Hydrogenation of p+ poly-Si by Al2O3 nanolayers prepared by atomic layer deposition

Roel J. Theeuwes, Jimmy Melskens, Wolfhard Beyer, Uwe Breuer, Astrid Gutjahr, Agnes A. Mewe, Bart Macco, Wilhelmus M. M. Kessels

Summary: Polysilicon (poly-Si) passivating contacts, aided by hydrogenation treatments, have achieved high conversion efficiencies in lab-scale crystalline silicon (c-Si) solar cells due to their excellent surface passivation quality. This study investigated the effect of Al2O3 layers deposited using different atomic layer deposition (ALD) methods on the hydrogenation of p(+) poly-Si and compared it to the direct passivation of c-Si by the same Al2O3 layers. The results showed that a wide range of ALD conditions could achieve excellent hydrogenation of p(+) poly-Si, although higher annealing temperatures were required compared to c-Si passivation. The different ALD conditions resulted in Al2O3 layers with varying refractive indices, O/Al ratios, and hydrogen content, and the p(+) poly-Si layer acted as a hydrogen reservoir, affecting the hydrogen effusion profiles of the Al2O3 layers.

JOURNAL OF APPLIED PHYSICS (2023)

Article Chemistry, Multidisciplinary

Computational Investigation of Precursor Blocking during Area- Selective Atomic Layer Deposition Using Aniline as a Small-Molecule Inhibitor

I. Tezsevin, J. F. W. Maas, M. J. M. Merkx, R. Lengers, W. M. M. Kessels, T. E. Sandoval, A. J. M. Mackus

Summary: Area-selective atomic layer deposition can be achieved using small-molecule inhibitors (SMIs), but finding suitable SMIs with high selectivity is challenging. Aniline has been identified as an effective SMI during the selective deposition of TiN, selectively adsorbing on non-growth areas and limiting adsorption on the growth area of SiO2.

LANGMUIR (2023)

Article Chemistry, Multidisciplinary

MoS2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barrier

Johanna (Sanne) H. Deijkers, Arthur A. de Jong, Miika J. Mattinen, Jeff J. P. M. Schulpen, Marcel A. Verheijen, Hessel Sprey, Jan Willem Maes, Wilhelmus (Erwin) M. M. Kessels, Ageeth A. Bol, Adriaan J. M. Mackus

Summary: Miniaturization in integrated circuits requires scaling down the Cu diffusion barriers between metal lines and dielectric material. This study demonstrates that MoS2 synthesized by atomic layer deposition (ALD) can be used as a Cu diffusion barrier, offering enhanced dielectric lifetime and improved device performance. By further reducing the thickness, ALD MoS2 films can be applied as ultrathin Cu diffusion barriers.

ADVANCED MATERIALS INTERFACES (2023)

Article Chemistry, Multidisciplinary

Plasma-Assisted Atomic Layer Deposition of IrO2 for Neuroelectronics

Valerio Di Palma, Andrea Pianalto, Michele Perego, Graziella Tallarida, Davide Codegoni, Marco Fanciulli

Summary: In vitro and in vivo stimulation and recording of neuron action potential can be achieved using microelectrode arrays made of IrO2, a conductive oxide known for its biocompatibility and charge injection capabilities. This study presents the growth of nanocrystalline rutile IrO2 using a new plasma-assisted ALD process, and provides a comprehensive characterization of its morphological, structural, physical, chemical, and electrochemical properties. The results demonstrate that IrO2 grown by PA-ALD is an excellent material for neuroelectronic applications, with high charge injection capacity and double-layer capacitance.

NANOMATERIALS (2023)

Article Nanoscience & Nanotechnology

In Situ IR Spectroscopy Studies of Atomic Layer-Deposited SnO2 on Formamidinium-Based Lead Halide Perovskite

Andrea E. A. Bracesco, Jarvi W. P. Jansen, Haibo Xue, Valerio Zardetto, Geert Brocks, Wilhelmus M. M. Kessels, Shuxia Tao, Mariadriana Creatore

Summary: By optimizing the optoelectronic properties of the absorber and its interfaces with charge transport layers (CTLs), perovskite photovoltaics has achieved conversion efficiencies of 26.0%. However, commonly adopted organic CTLs can cause parasitic absorption and device instability, so metal oxides like atomic layer-deposited SnO2 have been introduced for enhanced stability. When ALD SnO2 is directly processed on the absorber without the fullerene layer, chemical modifications of the inorganic fraction of the perovskite occur, compromising the device performance.

ACS APPLIED MATERIALS & INTERFACES (2023)

Article Physics, Applied

Excellent passivation of germanium surfaces by POx/Al2O3 stacks

Roel J. Theeuwes, Wilhelmus J. H. Berghuis, Bart Macco, Wilhelmus M. M. Kessels

Summary: This study demonstrates that stacks of phosphorous oxide and aluminum oxide (POx/Al2O3) provide excellent and stable passivation of germanium surfaces with surface recombination velocities as low as 8.9 cm/s. The POx/Al2O3 stack also exhibits positive fixed charge on germanium, making it ideal for passivating highly doped n-type germanium surfaces. The chemical passivation mechanism is related to defect passivation by hydrogen, which is mobilized by the formation of AlPO4 during annealing. The GeOx interlayer is also removed during the deposition of POx/Al2O3 stacks, leading to improved passivation quality and simplified device fabrication workflows.

APPLIED PHYSICS LETTERS (2023)

Article Physics, Applied

Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)(3)

Nicholas J. J. Chittock, Yi Shu, Simon D. D. Elliott, Harm C. M. Knoops, W. M. M. (Erwin). Kessels, Adriaan J. M. Mackus

Summary: This study presents an isotropic atomic layer etching (ALE) process involving SF6 plasma and trimethylaluminium [Al(CH3)(3)] for controlled etching of GaN. The ALE process reduces oxygen and carbon contamination while smoothing the surface. Experimental results show that the etch rates at 150 and 300 degrees C are 0.31 and 0.40 nm/cycle, respectively, and the RMS roughness of the films decreases after etching. This ALE process enables accurate GaN thickness tuning, surface cleaning, and surface smoothing, allowing for further development of GaN devices.

JOURNAL OF APPLIED PHYSICS (2023)

Article Chemistry, Multidisciplinary

ALD-grown two-dimensional TiSx metal contacts for MoS2 field-effect transistors

Reyhaneh Mahlouji, Wilhelmus M. M. (Erwin) Kessels, Abhay A. Sagade, Ageeth A. Bol

Summary: The choice of metal contacts is crucial for the electrical characteristics of MoS2 field-effect transistors (FETs). In this study, 2D metallic TiSx was investigated as top contacts for MoS2 FETs, replacing the conventional 3D bulk metal contacts. It was found that using ultrathin TiSx contacts significantly improved the device metrics.

NANOSCALE ADVANCES (2023)

Article Materials Science, Multidisciplinary

Titania as Buffer Layer for Cd-Free Kesterite Solar Cells

Giorgio Tseberlidis, Valerio Di Palma, Vanira Trifiletti, Luigi Frioni, Matteo Valentini, Claudia Malerba, Alberto Mittiga, Maurizio Acciarri, Simona O. Binetti

Summary: Pure sulfide kesterite is a promising photovoltaic technology due to its excellent properties, but current efficiencies are limited due to several issues, including defects and nonoptimal band alignment. Experimental procedures combining TiO2 with kesterite have shown modest performance, but in this study, we report promising results using ALD-TiO2 as a buffer layer, achieving efficiencies comparable to reference devices.

ACS MATERIALS LETTERS (2023)

暂无数据