Conduction mechanisms at distinct resistive levels of Pt/TiO2-x/Pt memristors

Seamlessly fused digital-analogue reconfigurable computing using memristors

(2018) Alexantrou Serb et al.   Nature Communications

Electrical characteristics of interfacial barriers at metal—TiO2 contacts

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Interface Asymmetry Induced by Symmetric Electrodes on Metal-Al:TiO ${}_{\rm x}$ -Metal Structures

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Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)

(2017) Ilia Valov   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices

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Multibit memory operation of metal-oxide bi-layer memristors

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Resistive switching of Pt/TiOx/Pt devices fabricated on flexible Parylene-C substrates

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Unsupervised learning in probabilistic neural networks with multi-state metal-oxide memristive synapses

(2016) Alexander Serb et al.   Nature Communications

Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell

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High Density Crossbar Arrays with Sub- 15 nm Single Cells via Liftoff Process Only

(2016) Ali Khiat et al.   Scientific Reports

Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic

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Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOxBased Memristive Devices

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A $\mu $ -Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays

(2015) Radu Berdan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Recent developments in TiO2 as n- and p-type transparent semiconductors: synthesis, modification, properties, and energy-related applications

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X-ray Absorption Spectroscopy Study of TiO2–x Thin Films for Memory Applications

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Training and operation of an integrated neuromorphic network based on metal-oxide memristors

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Reconfigurable Memristive Device Technologies

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Influence of Ti top electrode thickness on the resistive switching properties of forming free and self-rectified TiO 2−x thin films

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Effect of electrode type in the resistive switching behaviour of TiO2thin films

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Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices

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Rectifying characteristic of Pt/TiOx/metal/Pt controlled by electronegativity

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Scanning probe based observation of bipolar resistive switching NiO films

(2010) Min Hwan Lee et al.   APPLIED PHYSICS LETTERS

Effects of the compliance current on the resistive switching behavior of TiO2 thin films

(2009) X. Cao et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

TiN electrode-induced bipolar resistive switching of TiO2 thin films

(2009) Young Ho Do et al.   CURRENT APPLIED PHYSICS

Mechanism for bipolar switching in aPt/TiO2/Ptresistive switching cell

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Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Memristive switching mechanism for metal/oxide/metal nanodevices

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