p-Diamond as candidate for plasmonic terahertz and far infrared applications

High values of the hole mobility, low contact resistance, and high hole sheet densities in diamond two-dimensional hole gas make p-diamond field effect transistors superb candidates for implementing high temperature plasmonic sub-terahertz, terahertz, and far infrared devices. Our calculations show that p-diamond sub-THz transistors are viable contenders, especially for applications in the 200 to 600 GHz atmospheric window which are of special interest for the beyond 5G sub-THz communications. Published by AIP Publishing.