4.6 Article

Influence of post-deposition annealing on the chemical states of crystalline tantalum pentoxide films

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SPRINGER HEIDELBERG
DOI: 10.1007/s00339-018-2198-9

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  1. National Council of Science and Technology (CONACYT) Mexico
  2. program Catedras CONACYT [3035]

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We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on the chemical properties of crystalline films grown on Si(100) substrates by radio frequency magnetron sputtering. The atomic arrangement, as determined by X-ray diffraction, is predominately hexagonal , however, there seems to be an optimal annealing temperature that maximizes the O% to Ta% ratio. We found that at 1273 K the ratio slightly reduces suggesting oxygen depletion.

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