High-Performance SiC Nanobelt Photodetectors with Long-Term Stability Against 300 °C up to 180 Days

In the present work, high-performance photodetectors (PDs) based on a single B-doped 3C-SiC nanobelt, which are synthesized via catalyst-free pyrolysis of polymeric precursors of polysilazane, are reported. The as-built PDs have a high responsivity and external quantum efficiency of 6.37 x 10(5) A.W-1 and 2.0 x 10(8)% under 405 nm light with a power density of 0.14 mW.cm(-2) at 5 V, respectively. The detectivity of the PDs is measured to be of 6.86 x 10(14) Jones. Moreover, the B-doped 3C-SiC nanobelt PDs exhibit a long-term stability against 300 degrees C up to 180 days, suggesting their promising applications to be served under harsh conditions.