期刊
CENTRAL EUROPEAN JOURNAL OF PHYSICS
卷 7, 期 4, 页码 654-662出版社
SCIENDO
DOI: 10.2478/s11534-009-0096-7
关键词
superconductivity; diamond; silicon; silicon carbide; type-I
This review covers recent advances in superconductivity of diamond, Si, SiC, group III-V and II-IV semiconductors, metal-intercalated graphite and fullerites. The results are critically analyzed and prospects are given for future research directions. In particular, it is argued that the highest transition temperatures of similar to 9 K in diamond and 11.5 K in CaC6 can further enhanced and that no reliable evidence exists yet for superconductivity in III-V semiconductors.
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