期刊
ADVANCED ELECTRONIC MATERIALS
卷 4, 期 12, 页码 -出版社
WILEY
DOI: 10.1002/aelm.201800204
关键词
eutectic gallium indium alloy (EGaIn); spin crossover (SCO); thin films; tunnel junctions
资金
- French National Research Agency (ANR) Investment for the Future Programme IdEx Bordeaux [ANR-10-IDEX-03-02]
- Mexican government via the National Council of Sciences and Technology (CONACyT) [073096, 291060]
Thin films of a molecular spin crossover (SCO) Iron(II) complex featuring a high transition temperature are grown by sublimation in high vacuum on Au-TS and investigated by X-ray and UV photoelectron spectroscopies. Temperature-dependent studies demonstrate that the thermally induced spin crossover behavior is preserved in thin films. A large-area ultrathin switchable spin crossover molecular vertical tunnel junction with top electrodes of the liquid eutectic of gallium and indium, for which the spin-state switching of the films induces a two orders of magnitude change in the tunneling current density flowing through the junction, is reported here. The results on large-area junctions, rationalized by density functional theory calculations, demonstrate the high potential of SCO-based switchable molecular junctions as functional devices.
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