Diffusion of n-type dopants in germanium

Doping dependence of self-diffusion in germanium and the charge states of vacancies

(2013) T. Südkamp et al.   APPLIED PHYSICS LETTERS

A-centers in silicon studied with hybrid density functional theory

(2013) H. Wang et al.   APPLIED PHYSICS LETTERS

Co-doping with antimony to control phosphorous diffusion in germanium

(2013) H. A. Tahini et al.   JOURNAL OF APPLIED PHYSICS

Impact of isovalent doping on radiation defects in silicon

(2013) C. A. Londos et al.   JOURNAL OF APPLIED PHYSICS

Mechanisms of boron diffusion in silicon and germanium

(2013) S. Mirabella et al.   JOURNAL OF APPLIED PHYSICS

Radiation-enhanced self- and boron diffusion in germanium

(2013) S. Schneider et al.   PHYSICAL REVIEW B

Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions

(2013) R. Kube et al.   PHYSICAL REVIEW B

Extended Point Defects in Crystalline Materials: Ge and Si

(2013) N. E. B. Cowern et al.   PHYSICAL REVIEW LETTERS

Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application

(2012) Woo-Shik Jung et al.   APPLIED PHYSICS LETTERS

High phosphorous doped germanium: Dopant diffusion and modeling

(2012) Yan Cai et al.   JOURNAL OF APPLIED PHYSICS

Defect engineering of the oxygen-vacancy clusters formation in electron irradiated silicon by isovalent doping: An infrared perspective

(2012) C. A. Londos et al.   JOURNAL OF APPLIED PHYSICS

Ab initio study of vacancy and self-interstitial properties near single crystal silicon surfaces

(2012) Eiji Kamiyama et al.   JOURNAL OF APPLIED PHYSICS

Strain-induced changes to the electronic structure of germanium

(2012) H Tahini et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

On the diffusion and activation of n-type dopants in Ge

(2012) Jan Vanhellemont et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Point defect engineering strategies to retard phosphorous diffusion in germanium

(2012) H. A. Tahini et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Role of F on the Electrical Activation of As in Ge

(2012) G. Impellizzeri et al.   ECS Journal of Solid State Science and Technology

Diffusion of tin in germanium: A GGA+U approach

(2011) H. Tahini et al.   APPLIED PHYSICS LETTERS

Suppression of donor-vacancy clusters in germanium by concurrent annealing and irradiation

(2011) S. Schneider et al.   APPLIED PHYSICS LETTERS

Point defect engineering strategies to suppress A-center formation in silicon

(2011) A. Chroneos et al.   APPLIED PHYSICS LETTERS

Diffusion of E centers in germanium predicted using GGA+U approach

(2011) H. Tahini et al.   APPLIED PHYSICS LETTERS

Improved germanium n+/p junction diodes formed by coimplantation of antimony and phosphorus

(2011) Jeehwan Kim et al.   APPLIED PHYSICS LETTERS

Electrical Characteristics of Germanium $\hbox{n}^{+}/ \hbox{p}$ Junctions Obtained Using Rapid Thermal Annealing of Coimplanted P and Sb

(2011) G Thareja et al.   IEEE ELECTRON DEVICE LETTERS

Vacancy properties in germanium probed by cobalt diffusion

(2011) Nicolaas A. Stolwijk et al.   JOURNAL OF APPLIED PHYSICS

Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

(2011) A. Chroneos et al.   JOURNAL OF APPLIED PHYSICS

Fluorine effect on As diffusion in Ge

(2011) G. Impellizzeri et al.   JOURNAL OF APPLIED PHYSICS

Structure of Sn1−xGex random alloys as obtained from the coherent potential approximation

(2011) J. J. Pulikkotil et al.   JOURNAL OF APPLIED PHYSICS

A-centers and isovalent impurities in germanium: Density functional theory calculations

(2011) A. Chroneos et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Fluorine in Ge: Segregation and EOR-defects stabilization

(2011) S. Boninelli et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Self-interstitials injection in crystalline Ge induced by GeO2nanoclusters

(2011) G. G. Scapellato et al.   PHYSICAL REVIEW B

Effect of carbon on dopant–vacancy pair stability in germanium

(2011) A Chroneos   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Vacancy–indium clusters in implanted germanium

(2010) A. Chroneos et al.   CHEMICAL PHYSICS LETTERS

Interaction of A-centers with isovalent impurities in silicon

(2010) A. Chroneos et al.   JOURNAL OF APPLIED PHYSICS

Experiments and simulation on diffusion and activation of codoped with arsenic and phosphorous germanium

(2010) P. Tsouroutas et al.   JOURNAL OF APPLIED PHYSICS

High-level incorporation of antimony in germanium by laser annealing

(2010) E. Bruno et al.   JOURNAL OF APPLIED PHYSICS

Thermal desorption of Ge native oxides and loss of Ge from the surface

(2010) Jungwoo Oh et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

E centers in ternary Si1−x−yGexSny random alloys

(2009) A. Chroneos et al.   APPLIED PHYSICS LETTERS

Millisecond flash lamp annealing of shallow implanted layers in Ge

(2009) C. Wündisch et al.   APPLIED PHYSICS LETTERS

Modeling and experiments on diffusion and activation of phosphorus in germanium

(2009) P. Tsouroutas et al.   JOURNAL OF APPLIED PHYSICS

Lattice location study of implanted In in Ge

(2009) S. Decoster et al.   JOURNAL OF APPLIED PHYSICS

Fluorine codoping in germanium to suppress donor diffusion and deactivation

(2009) A. Chroneos et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic and extrinsic diffusion of indium in germanium

(2009) R. Kube et al.   JOURNAL OF APPLIED PHYSICS

End of range defects in Ge

(2009) S. Koffel et al.   JOURNAL OF APPLIED PHYSICS

Effect of germanium substrate loss and nitrogen on dopant diffusion in germanium

(2009) A. Chroneos   JOURNAL OF APPLIED PHYSICS

Accurate prediction of defect properties in density functional supercell calculations

(2009) Stephan Lany et al.   MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING

Mechanism of B diffusion in crystalline Ge under proton irradiation

(2009) E. Bruno et al.   PHYSICAL REVIEW B

Atomic-resolution three-dimensional imaging of germanium self-interstitials near a surface: Aberration-corrected transmission electron microscopy

(2009) D. Alloyeau et al.   PHYSICAL REVIEW B

Interstitial-Mediated Diffusion in Germanium under Proton Irradiation

(2009) H. Bracht et al.   PHYSICAL REVIEW LETTERS

Modeling of phosphorus diffusion in Ge accounting for a cubic dependence of the diffusivity with the electron concentration

(2009) Thomas Canneaux et al.   THIN SOLID FILMS

Vacancy-mediated dopant diffusion activation enthalpies for germanium

(2008) A. Chroneos et al.   APPLIED PHYSICS LETTERS

Formation and evolution of F nanobubbles in amorphous and crystalline Si

(2008) S. Boninelli et al.   APPLIED PHYSICS LETTERS

Self-diffusion in germanium isotope multilayers at low temperatures

(2008) E. Hüger et al.   APPLIED PHYSICS LETTERS

Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion

(2008) Miki Naganawa et al.   APPLIED PHYSICS LETTERS

Proton irradiation of germanium isotope multilayer structures at elevated temperatures

(2008) S. Schneider et al.   JOURNAL OF APPLIED PHYSICS

The vacancy in silicon: A critical evaluation of experimental and theoretical results

(2008) Hartmut Bracht et al.   JOURNAL OF APPLIED PHYSICS

Engineering the free vacancy and active donor concentrations in phosphorus and arsenic double donor-doped germanium

(2008) A. Chroneos et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium

(2008) Sergej Brotzmann et al.   JOURNAL OF APPLIED PHYSICS

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

(2008) D. P. Brunco et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation

(2008) M. Posselt et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Phosphorous clustering in germanium-rich silicon germanium

(2008) A. Chroneos et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Nonlinear stability ofEcenters inSi1−xGex: Electronic structure calculations

(2008) A. Chroneos et al.   PHYSICAL REVIEW B

Diffusion and defect reactions between donors, C, and vacancies in Ge. II. Atomistic calculations of related complexes

(2008) A. Chroneos et al.   PHYSICAL REVIEW B

Low-temperature irradiation-induced defects in germanium:In situanalysis

(2008) A. Mesli et al.   PHYSICAL REVIEW B

Intrinsic and dopant-enhanced solid-phase epitaxy in amorphous germanium

(2008) B. C. Johnson et al.   PHYSICAL REVIEW B

Ab initioinvestigation of phosphorus diffusion paths in germanium

(2008) C. Janke et al.   PHYSICAL REVIEW B

Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results

(2008) S. Brotzmann et al.   PHYSICAL REVIEW B

Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs

(2008) Stephan Lany et al.   PHYSICAL REVIEW B