Effects of annealing on performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators

出版年份 2013 全文链接

标题

作者

关键词

Quantum dot, Electroabsorption modulator, Lumped element, Annealing, Interdiffusion, 85.35.Be, 42.79.Hp, 81.40.Ef

出版物

Volume 8, Issue 1, Pages 59

出版商

Springer Nature

发表日期

2013-02-07

DOI

10.1186/1556-276x-8-59

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