期刊
NANOSCALE RESEARCH LETTERS
卷 8, 期 -, 页码 1-5出版社
SPRINGER
DOI: 10.1186/1556-276X-8-217
关键词
Quantum dots; Silicon; Germanium; Interband transitions; Infrared photodetectors
资金
- RFBR [13-02-12002]
We report the fabrication and characterization of a ten-period Ge quantum dot photodetector grown on SiGe pseudosubstrate. The detector exhibits tunable photoresponse in both 3- to 5- mu m and 8- to 12- mu m spectral regions with responsivity values up to about 1 mA/W at a bias of -3 V and operates under normal incidence radiation with background limited performance at 100 K. The relative response in the mid- and long-wave atmospheric windows could be controlled through the applied voltage.
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