Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3 stack structure using an implant-free technique

标题
Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3 stack structure using an implant-free technique
作者
关键词
-
出版物
Nanoscale Research Letters
Volume 7, Issue 1, Pages 339
出版商
Springer Nature
发表日期
2012-12-06
DOI
10.1186/1556-276x-7-339

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