期刊
NANOSCALE RESEARCH LETTERS
卷 6, 期 -, 页码 -出版社
SPRINGER
DOI: 10.1186/1556-276X-6-129
关键词
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资金
- Australian Research Council ARC via its Centres of Excellence
In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%). Si nanocrystals (Si-NC) containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions: furnace annealing and RTA both at 1,100 degrees C. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better degree of crystallization of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.
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