期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 2, 期 22, 页码 4401-4405出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3tc32166e
关键词
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资金
- Ministry of Science and Technology of the Republic of China [NSC 101-2112-M-007-015-MY3, 101-2218-E-007-009-MY3, 102-2633-M-007-002]
- National Tsing Hua University [102N2022E1, 102N2744E1]
Manipulated bias control of a selector to a memristor was demonstrated in Zn-doped amorphous SiOx (SZO) films, within which ZnOx/Zn nanoclusters were segregated. For the selector, namely diode-like (pre-forming) switching, the threshold voltage varied from 9 to 2.7 V. with a resistance ratio of similar to 10(4), by tuning the concentration of ZnOx/Zn nanoclusters. Stable bipolar resistive switching was achieved by current-controlled RESET and voltage-controlled SET processes. The working mechanism of the selector was explained by a transport mechanism which involved the generalized trap-assisted tunnelling of electrons resulting from doping with ZnOx/Zn nanoclusters. The dual-switching-mode of SZO provides a promising application for 3D cross-bar RRAM.
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