High-performance organic nano-floating-gate memory devices based on graphite nanocrystals as charge-trapping elements and high-k Ta2O5 as a controlled gate dielectric
出版年份 2014 全文链接
标题
High-performance organic nano-floating-gate memory devices based on graphite nanocrystals as charge-trapping elements and high-k Ta2O5 as a controlled gate dielectric
作者
关键词
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出版物
Journal of Materials Chemistry C
Volume 2, Issue 27, Pages 5342
出版商
Royal Society of Chemistry (RSC)
发表日期
2014-06-04
DOI
10.1039/c4tc00598h
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