期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 1, 期 14, 页码 2540-2547出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3tc00561e
关键词
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资金
- National Natural Science Foundation of China (NSFC) [61106066, 21101038, 60976049]
- 973 program [2012CB326407]
- Zhejiang Provincial Science Foundation for Distinguished Young Scholars [R4100242]
- Zhejiang Provincial Nature Science Foundation [Y4110529]
- Ningbo Municipal Natural Science Foundation [2011A610093, 2011A610094]
- Chinese Academy of Sciences
We demonstrate a strategy for the growth of Mn2+ ion doped cadmium based II-VI semiconductor quantum dots (QDs) with a designed buffer layer of ZnS (MnS/ZnS/CdS or Mn:CdS QDs), which aims to meet the challenge of obtaining highly efficient and well-resolved Mn2+ ion emission. First, small, high quality MnS cores are obtained by using thiols to replace conventional alkyl amines as capping ligands. Then a buffer layer of ZnS with a tailored thickness is introduced to the QDs before the growth of CdS shells to reduce the size mismatch between the Mn2+ (dopant) and Cd2+ (host) ions. The fabricated MnS/ZnS/CdS core/shell QDs exhibit a high PL QY of up to 68%, which is the highest ever reported for any type of Mn2+ ion doped cadmium based II-VI semiconductor QD. The photoluminescence (PL) of the QDs consists of well-resolved Mn2+ ion emission without any detectable emission from the CdS band edge or surface defects. In addition, our MnS/ZnS/CdS QDs cannot only be made water-soluble, but can also be coated by ligands with short carbon chain lengths, nearly without cost to the PL QY, which could make them strong candidates for practical applications in biology/biomedicine and opto/electronic devices.
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