Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory

标题
Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory
作者
关键词
-
出版物
Journal of Materials Chemistry C
Volume 1, Issue 45, Pages 7593
出版商
Royal Society of Chemistry (RSC)
发表日期
2013-10-01
DOI
10.1039/c3tc31542h

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