Contact printing of horizontally aligned Zn2GeO4and In2Ge2O7nanowire arrays for multi-channel field-effect transistors and their photoresponse performances

标题
Contact printing of horizontally aligned Zn2GeO4and In2Ge2O7nanowire arrays for multi-channel field-effect transistors and their photoresponse performances
作者
关键词
-
出版物
Journal of Materials Chemistry C
Volume 1, Issue 1, Pages 131-137
出版商
Royal Society of Chemistry (RSC)
发表日期
2012-10-22
DOI
10.1039/c2tc00055e

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