期刊
JOURNAL OF MATERIALS CHEMISTRY A
卷 1, 期 4, 页码 1148-1154出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c2ta00471b
关键词
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资金
- National Basic Research Program of China [2012CB932400, 2010CB301802]
- Major Research Plan of the National Natural Science Foundation of China [91027021, 91233110]
- National Natural Science Foundation of China [20901021, 51172151, 61106010, 21101051]
- Foundation for Young Scientists in Higher Education Institutions of Anhui Province [2011SQRL009ZD]
- Funds for the Excellent Young Talents in Universities of the Education Department of Anhui Province [2010AJYQ0360]
Applications of one-dimensional (1D) semiconductor nanostructures in nanoelectronics and nano-optoelectronics rely on the ability to rationally tune their electrical transport properties. Here we report the synthesis of single-crystalline Ag-doped ZnSe nanowires (NWs) by using silver sulfide (Ag2S) as the p-type dopant via a thermal evaporation method. The ZnSe: Ag NWs had the zinc blende structure with [111] growth orientation. Significantly, the conductivities of the NWs could be tuned over 9 orders of magnitude by adjusting the Ag doping levels. Field-effect transistors (FETs) constructed from the ZnSe: Ag NWs verified their p-type nature with a hole concentration of up to 2.1 x 10(19) cm(-3), which is the highest value achieved for p-type ZnSe nanostructures thus far. Schottky barrier diodes (SBDs) based on the ZnSe: Ag NW/ITO junctions exhibited remarkable rectifying behavior, with a rectification ratio of > 10(7) and a small ideality factor of similar to 1.29 at 320 K. Moreover, photovoltaic devices were fabricated from the ZnSe NW array/Si p-n heterojunctions by aligning the p-ZnSe NWs in a parallel fashion on a n-Si substrate. The device with a graphene top electrode showed a large fill factor (FF) of 61%, yielding a power conversion efficiency of similar to 1.04%. The realization of p-type ZnSe NWs with tunable conductivity opens up opportunities for a host of high-performance nanoelectronic and nano-optoelectronic devices.
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