期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 4, 期 3, 页码 942-947出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2014.2301894
关键词
Cu(In,Ga)Se-2 (CIGS); current-voltage (J-V) distortion; photovoltaic cells; sputtering; thin films; Zn(S,O)
资金
- National Renewable Energy Laboratory [UGA-0-40127-10]
- U.S. Department of Energy SunShot program
Sputtered-deposited Zn(S,O) is an attractive alternative to CdS for the window layer of Cu(In,Ga)Se-2 (CIGS) thin-film solar cells due to its higher band gap, which allows greater blue-photon collection. However, distortions to current-voltage (J-V) curves are observed in some cases. A straightforward photodiode model with a secondary barrier at the Zn(S,O)/CIGS interface is employed to explain the physical mechanisms of the experimental J-V distortions. The primary contributor to the secondary barrier is the conduction-band offset (CBO), whose magnitude is determined by the oxygen fraction in Zn(S,O) and by the carrier density of Zn(S,O); the latter may be increased with indium-doping. Comparison of experimental and simulated J-V characteristics with variation in oxygen fraction, window carrier density, and temperature, allows a reasonably compelling test of the secondary-barrier model for this system.
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