期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 4, 期 1, 页码 22-27出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2013.2287770
关键词
Microcrystalline silicon; mobility gap; optical and electrical simulation; solar cells; TCO morphology
资金
- European Commission [283501]
Hydrogenated microcrystalline silicon (mu c-Si:H) is an important material for high-efficiency multijunction solar cells. Due to its complex microstructural properties, it is difficult to describe the electronic behavior clearly. In this study, we measure opto-electronic properties including the mobility gap of mu c-Si:H films in solar cells, as well as physical properties such as the crystalline fraction profile. The height distribution function of the ZnO substrates is obtained by AFM scans, which is used for optical simulation. All the parameters that we obtained from measurements were used as input parameters of a model in the ASA simulator. We obtained a good fit between measurements and simulations
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