期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 3, 期 1, 页码 439-445出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2012.2215842
关键词
Cu2ZnSnS4 (CZTS); earth; kesterite; photovoltaic; thin film
资金
- Alliance for Sustainable Energy, LLC [DE-AC36-08GO28308]
- U.S. Department of Energy
- California NanoSystem Institute
Recent years have seen dramatic improvements in the performance of kesterite devices. The existence of devices of comparable performance, made by a number of different techniques, provides some new perspective on what characteristics are likely fundamental to the material. Here, we review progress in kesterite device fabrication, aspects of the film characteristics that have yet to be understood, and challenges in device development that remain for kesterites to contribute significantly to photovoltaic manufacturing. Performance goals, as well as characteristics of mid-gap defect density, free carrier density, surfaces, grain boundaries, grain-to-grain uniformity, and bandgap alloying are discussed.
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