期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 3, 期 1, 页码 472-475出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2012.2224321
关键词
Cadmium sulfide (CdS); copper indium gallium selenide (CIGS); copper zinc tin selenide (CZTS); reflection; zinc sulfide (ZnS)
资金
- U.S Department of Energy [DE-AC36-08GO28308]
- National Renewable Energy Laboratory
The recent improvements in efficiencies for kesterite (copper zinc tin selenide, CZTS) devices warrant an investigation into how the kesterite device stack can best be capped to minimize losses due to reflection. Additionally, ongoing efforts to replace the cadmium sulfide (CdS) layer in copper indium gallium selenide (CIGS)-based devices, most notably with zinc sulfide (ZnS), need to be accompanied by a similar investigation into how to best finish a CIGS/ZnS stack to minimize reflection losses. An optical analysis of how CZTS/CdS and CIGS/ZnS devices reflect light has been performed for the purpose of optimizing the transparent conducting oxide and antireflection layers for each stack. This research addresses what is similar and what is different between the alternative stacks and the routine CIGS/CdS stack and how to best reduce the reflection losses for each situation.
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